BLF7G20LS-200, BLF7G20L-200 Datasheet - NXP

BLF7G20LS-200 Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 .

BLF7G20LS-200 Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G20L-200_PhilipsSemiconductors.pdf