BLF7G20LS-200, BLF7G20L-200 Power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev.01 * 3 June 2010 Objective data sheet 1.Product profile 1.1 Gen.
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

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BLF7G20LS-200 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF7G20LS-200, BLF7G20L-200. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF7G20LS-200, BLF7G20L-200
Manufacturer: NXP ↗
File Size: 186.21 KB
Datasheet: BLF7G20L-200_PhilipsSemiconductors.pdf
Description: Power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF7G20LS-200, BLF7G20L-200.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applicatio

Applications

* at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 VDS (V) 28 PL(AV) (W) 55 Gp (dB) 18 ηD (%) 33 ACPR (dBc

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BLF7G20L-200 Power LDMOS transistor NXP

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