BLF7G27L-140 Power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev.01 * 27 May 2010 Objective data sheet 1.Product profile 1.1 Gen.
140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number: BLF7G27L-140
Manufacturer: NXP ↗
File Size: 125.13 KB
Datasheet: BLF7G27L-140_PhilipsSemiconductors.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation IS-95 [1] f (MHz) 2500 to 2700 IDq (mA) 1300 VDS (V) 28 PL(AV) (W) 20 Gp (dB) 17.0 ηD (%) 22 ACPR885k (dBc)

BLF7G27L-140 Distributors

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BLF7G27L-140 Power LDMOS transistor NXP

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