BLF7G20LS-160P, BLF7G20L-160P Datasheet - NXP

BLF7G20LS-160P Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 .

BLF7G20LS-160P Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G20L-160P_PhilipsSemiconductors.pdf