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BLF7G20LS-160P

Power LDMOS transistor

BLF7G20LS-160P Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G20LS-160P General Description

160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 .

BLF7G20LS-160P Datasheet (128.75 KB)

Preview of BLF7G20LS-160P PDF

Datasheet Details

Part number:

BLF7G20LS-160P

Manufacturer:

NXP ↗

File Size:

128.75 KB

Description:

Power ldmos transistor.
www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 .

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TAGS

BLF7G20LS-160P Power LDMOS transistor NXP

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