BLF7G20LS-160P, BLF7G20L-160P Power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev.01 * 22 June 2010 Objective data sheet 1.Product profile 1.1 .
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

📥 Download Datasheet

BLF7G20LS-160P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF7G20LS-160P, BLF7G20L-160P. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF7G20LS-160P, BLF7G20L-160P
Manufacturer: NXP ↗
File Size: 128.75 KB
Datasheet: BLF7G20L-160P_PhilipsSemiconductors.pdf
Description: Power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF7G20LS-160P, BLF7G20L-160P.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applicatio

Applications

* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (dB) 17.5 18.5 ηD (%

BLF7G20LS-160P Distributors

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BLF7G20L-160P Power LDMOS transistor NXP

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