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BLF7G22L-250P Power LDMOS transistor

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Description

www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev.01 * 6 May 2010 Objective data sheet 1.Product profile 1.1 Ge.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

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Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applicatio

Applications

* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 ηD (%) 30 ACPR (dBc

BLF7G22L-250P Distributors

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