BLF7G22L-250P Datasheet - NXP

BLF7G22L-250P Power LDMOS transistor

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 .

BLF7G22L-250P Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G22L-250P_PhilipsSemiconductors.pdf