Part number:
BLF7G22L-250P
Manufacturer:
File Size:
128.56 KB
Description:
Power ldmos transistor.
BLF7G22L-250P_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLF7G22L-250P
Manufacturer:
File Size:
128.56 KB
Description:
Power ldmos transistor.
BLF7G22L-250P, Power LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900
BLF7G22L-250P Features
* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applicatio
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