BLF0810-90 Base station LDMOS transistors

NXP

Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product speciﬁcation .
BLF0810-90; BLF0810S-90 APPLICATIONS. RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000.

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Datasheet Specifications

Part number: BLF0810-90
Manufacturer: NXP ↗
File Size: 151.27 KB
Datasheet: BLF0810-90_PhilipsSemiconductors.pdf
Description: Base station LDMOS transistors

Features

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:
* Output power = 15 W (AV)
* Gain = 16 dB
* Efficiency = 27%
* ACPR =
* 46 dBc at

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BLF0810-90 Base station LDMOS transistors NXP

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