BLF0810-90; BLF0810S-90 APPLICATIONS * RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.
DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B PI
BLF0810S-90 Features
* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:
* Output power = 15 W (AV)
* Gain = 16 dB
* Efficiency = 27%
* ACPR =
* 46 dBc at
BLF0810-90_PhilipsSemiconductors.pdf
Datasheet Details
BLF0810S-90, BLF0810-90
151.27 KB
Base station ldmos transistors.
This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90.
Please refer to the document for exact specifications by model.
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