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BLF0810S-90, BLF0810-90 - Base station LDMOS transistors

NXP

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BLF0810S-90 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLF0810S-90, BLF0810-90
Manufacturer	NXP ↗
File Size	151.27 KB
Description	Base station LDMOS transistors
Datasheet	BLF0810-90_PhilipsSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90. Please refer to the document for exact specifications by model.

BLF0810S-90 Product details

Description

BLF0810-90; BLF0810S-90 APPLICATIONS RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.

Features

Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:.
Output power = 15 W (AV).
Gain = 16 dB.
Efficiency = 27%.
ACPR =.
46 dBc at 750 kHz and BW = 30 kHz.
70 W CW performance.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for.

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Published: Aug 17, 2007 |