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BLF0810S-90, BLF0810-90 Datasheet - NXP

BLF0810S-90 Base station LDMOS transistors

BLF0810-90; BLF0810S-90 APPLICATIONS * RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PI.

BLF0810S-90 Features

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:

* Output power = 15 W (AV)

* Gain = 16 dB

* Efficiency = 27%

* ACPR =

* 46 dBc at

BLF0810-90_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF0810S-90, BLF0810-90

Manufacturer:

NXP ↗

File Size:

151.27 KB

Description:

Base station ldmos transistors.

Note:

This datasheet PDF includes multiple part numbers: BLF0810S-90, BLF0810-90.
Please refer to the document for exact specifications by model.

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BLF0810S-90 BLF0810-90 Base station LDMOS transistors NXP

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