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BLF0810S-90

Base station LDMOS transistors

BLF0810S-90 Features

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:

* Output power = 15 W (AV)

* Gain = 16 dB

* Efficiency = 27%

* ACPR =

* 46 dBc at

BLF0810S-90 General Description

BLF0810-90; BLF0810S-90 APPLICATIONS

* RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PI.

BLF0810S-90 Datasheet (151.27 KB)

Preview of BLF0810S-90 PDF

Datasheet Details

Part number:

BLF0810S-90

Manufacturer:

NXP ↗

File Size:

151.27 KB

Description:

Base station ldmos transistors.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification .

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BLF0810S-90 Base station LDMOS transistors NXP

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