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BLF0810S-180, BLF0810-180 Datasheet - NXP

BLF0810S-180 Base station LDMOS transistors

BLF0810-180; BLF0810S-180 APPLICATIONS * Common source class-AB operation applications in the 860 to 960 MHz frequency range * CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - S.

BLF0810S-180 Features

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz:

* Output power = 30 W

* Gain = 16 dB

* Efficiency = 27%

* ACPR =

* 46 dBc at 750

BLF0810-180_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF0810S-180, BLF0810-180. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF0810S-180, BLF0810-180

Manufacturer:

NXP ↗

File Size:

161.39 KB

Description:

Base station ldmos transistors.

Note:

This datasheet PDF includes multiple part numbers: BLF0810S-180, BLF0810-180.
Please refer to the document for exact specifications by model.

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BLF0810S-180 BLF0810-180 Base station LDMOS transistors NXP

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