Description
BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descriptio.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regardin
Applications
* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1900 28 70
