BLF7G22L-250P Power LDMOS transistor

Ampleon

Description

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descriptio.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

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Datasheet Specifications

Part number: BLF7G22L-250P
Manufacturer: Ampleon
File Size: 604.03 KB
Datasheet: BLF7G22L-250P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regardin

Applications

* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1900 28 70

BLF7G22L-250P Distributors

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BLF7G22L-250P Power LDMOS transistor Ampleon

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