BLF7G22LS-130 Datasheet - NXP Semiconductors

BLF7G22LS-130 Power LDMOS transistor

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to .

BLF7G22LS-130 Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G22LS-130_NXPSemiconductors.pdf