Part number:
BLF7G22LS-130
Manufacturer:
NXP ↗ Semiconductors
File Size:
193.78 KB
Description:
Power ldmos transistor.
BLF7G22LS-130_NXPSemiconductors.pdf
Datasheet Details
Part number:
BLF7G22LS-130
Manufacturer:
NXP ↗ Semiconductors
File Size:
193.78 KB
Description:
Power ldmos transistor.
BLF7G22LS-130, Power LDMOS transistor
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to
BLF7G22LS-130 Features
* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applicatio
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