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BLF7G22LS-130 Power LDMOS transistor

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Description

BLF7G22LS-130 Power LDMOS transistor Rev.01 * 2 February 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 General descri.
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applicatio

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV)

BLF7G22LS-130 Distributors

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📌 All Tags

BLF7G22LS-130 Power LDMOS transistor NXP Semiconductors
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