Datasheet Specifications
- Part number
- BLF578
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 154.97 KB
- Datasheet
- BLF578_NXPSemiconductors.pdf
- Description
- Power LDMOS transistor
Description
www.DataSheet4U.com BLF578 Power LDMOS transistor Rev.01 * 11 December 2008 Objective data sheet 1.Product profile 1.1 General .
Features
* I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent therApplications
* and industrial applications in the HF to 500 MHz band. Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and hanBLF578 Distributors
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