BLF578 Datasheet - NXP Semiconductors

BLF578 Power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ES.

BLF578 Features

* I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efﬁciency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent ther

BLF578_NXPSemiconductors.pdf