BLF578 Datasheet - NXP Semiconductors

Power LDMOS transistor

BLF578 Features

* I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efﬁciency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent ther

BLF578 General Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ES.

BLF578 Datasheet (154.97 KB)

BLF578 Datasheet Preview — Preview of BLF578 PDF

Datasheet Details

Part number:

BLF578

Manufacturer:

NXP ↗ Semiconductors

File Size:

154.97 KB

Description:

Power ldmos transistor.

📁 Related Datasheet

BLF571 Power LDMOS transistor (Ampleon)

BLF571 HF / VHF power LDMOS transistor (NXP Semiconductors)

BLF573 Power LDMOS transistor (Ampleon)

BLF573 HF / VHF power LDMOS transistor (NXP Semiconductors)

BLF573S Power LDMOS transistor (Ampleon)

BLF573S HF / VHF power LDMOS transistor (NXP Semiconductors)

BLF574 Power LDMOS transistor (Ampleon)

BLF574 HF / VHF power LDMOS transistor (NXP Semiconductors)

BLF574XR Power LDMOS transistor (Ampleon)

BLF574XR Power LDMOS transistor (NXP)

TAGS

BLF578 Power LDMOS transistor NXP Semiconductors

Image Gallery

BLF578 Features

BLF578 General Description

Datasheet Details

File Size:

Description:

BLF578 Distributor