BLF645 Datasheet - NXP Semiconductors

datasheet Preview Page 1 from Datasheet4u.com

BLF645 Broadband power LDMOS transistor

BLF645 Broadband power LDMOS transistor Rev.01 * 27 January 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 General des.
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

BLF645_NXPSemiconductors.pdf

BLF645 Datasheet Preview — Preview of BLF645 PDF

Datasheet Details

Part number:

BLF645

Manufacturer:

NXP ↗ Semiconductors

File Size:

195.07 KB

Description:

Broadband power LDMOS transistor

Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiesc

Applications

* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 °C in a common source test circuit. Mode of operation CW, class-AB 2-t

BLF645 Distributors

📁 Related Datasheet

BLF640 BLF642 BLF644P BLF647 BLF647P BLF647PS

📌 All Tags

BLF645 Broadband power LDMOS transistor NXP Semiconductors

NXP Semiconductors BLF645-like datasheet