Datasheet Details
- Part number
- BLF645
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 195.07 KB
- Datasheet
- BLF645_NXPSemiconductors.pdf
- Description
- Broadband power LDMOS transistor
BLF645 Description
BLF645 Broadband power LDMOS transistor Rev.01 * 27 January 2010 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 General des.BLF645 Features
* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %BLF645 Applications
* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 °C in a common source test circuit. Mode of operation CW, class-AB 2-t
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