BLF645 Datasheet, Transistor, NXP Semiconductors

✔ BLF645 Features

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain =

✔ BLF645 Application

The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband p

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Part number:

BLF645

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NXP ↗ Semiconductors

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📄 Datasheet

Description:

Broadband power ldmos transistor. A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the