BLF645 Datasheet - NXP Semiconductors

BLF645 Broadband power LDMOS transistor

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performanc.

BLF645 Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %

* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiesc

BLF645 Datasheet (195.07 KB)