* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiesc
BLF645
NXP ↗ Semiconductors
195.07 KB
Broadband power ldmos transistor.
BLF645 Broadband power LDMOS transistor Rev. 01 27 January 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General des.
📁 Related Datasheet
BLF640 Power LDMOS transistor (Ampleon)
BLF640 Broadband power LDMOS transistor (NXP)
BLF642 Power LDMOS transistor (Ampleon)
BLF642 Broadband power LDMOS transistor (NXP)
BLF644P Power LDMOS transistor (Ampleon)
BLF644P Broadband power LDMOS transistor (NXP)
BLF645 Power LDMOS transistor (Ampleon)
BLF647 UHF power LDMOS transistor (NXP)
BLF647P Power LDMOS transistor (Ampleon)
BLF647P Broadband power LDMOS transistor (NXP)
