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BLF642 Power LDMOS transistor

BLF642 Description

BLF642 Broadband power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

BLF642 Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A :
* Average output power = 35 W
* Power gain = 19 dB
* Drain efficiency = 63 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain cur

BLF642 Applications

* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL

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Datasheet Details

Part number
BLF642
Manufacturer
Ampleon
File Size
440.92 KB
Datasheet
BLF642-Ampleon.pdf
Description
Power LDMOS transistor

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