BLF640 Datasheet (Ampleon) - Power LDMOS transistor

BLF640, Power LDMOS transistor

10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1.

Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.

Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5

BLF640 Features

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

* Excellent thermal stability

* No internal matching for broadband operation

* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applicatio