BLF647 Datasheet - NXP

BLF647 UHF power LDMOS transistor

1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB .

BLF647 Features

* High power gain

* Easy power control

* Excellent ruggedness

* Source on underside eliminates DC isolators, reducing common mode inductance

* Designed for broadband operation (HF to 800 MHz)

* Internal input damping for excellent stability over the wh

BLF647 Datasheet (127.71 KB)