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BLF647 UHF power LDMOS transistor

BLF647 Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product speciļ¬cation Supersedes data of 2001 Aug 02 2001 Nov 27 Philip.
1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.

BLF647 Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 800 MHz)
* Internal input damping for excellent stability over the wh

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