BLF647 - UHF power LDMOS transistor

NXP

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Datasheet Details

Part number	BLF647
Manufacturer	NXP
File Size	127.71 KB
Description	UHF power LDMOS transistor
Datasheet	BLF647_PhilipsSemiconductors.pdf

BLF647 Product details

Description

1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.The common source is connected to the mounting flange.QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 VDS (V) 28 28 PL (W) 120 120 (PEP) Top view Fig.1 Simplified outline.Gp (dB) >14.5 >14.5 ηD (%) >55 >40 dim (dBc) ≤ 26 LIMITI

Features

High power gain.
Easy power control.
Excellent ruggedness.
Source on underside eliminates DC isolators, reducing common mode inductance.
Designed for broadband operation (HF to 800 MHz).
Internal input damping for excellent stability over the whole frequency range.

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Published: Mar 23, 2005 |