BLF645 Power LDMOS transistor

Ampleon

Description

BLF645 Broadband power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

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Datasheet Specifications

Part number: BLF645
Manufacturer: Ampleon
File Size: 369.60 KB
Datasheet: BLF645-Ampleon.pdf
Description: Power LDMOS transistor

Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
* Average output power = 100 W
* Power gain = 18 dB
* Drain efficiency = 56 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a qu

Applications

* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL PL

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BLF645 Power LDMOS transistor Ampleon

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