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BLF645 Power LDMOS transistor

BLF645 Description

BLF645 Broadband power LDMOS transistor Rev.2 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

BLF645 Features

* CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
* Average output power = 100 W
* Power gain = 18 dB
* Drain efficiency = 56 %
* 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a qu

BLF645 Applications

* The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL PL

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Datasheet Details

Part number
BLF645
Manufacturer
Ampleon
File Size
369.60 KB
Datasheet
BLF645-Ampleon.pdf
Description
Power LDMOS transistor

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