BLF647P Power LDMOS transistor

Ampleon

Description

BLF647P Broadband power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

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Datasheet Specifications

Part number: BLF647P
Manufacturer: Ampleon
File Size: 378.35 KB
Datasheet: BLF647P-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

* The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(

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BLF647P Power LDMOS transistor Ampleon

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