BLF573, BLF573S - HF / VHF power LDMOS transistor

NXP Semiconductors

Datasheet Details

Part number	BLF573, BLF573S
Manufacturer	NXP Semiconductors
File Size	137.57 KB
Description	HF / VHF power LDMOS transistor
Datasheet	BLF573S_NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF573, BLF573S. Please refer to the document for exact specifications by model.

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 %.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF and VHF band).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.

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Published: Jan 27, 2016 |