BLF573S Datasheet - NXP Semiconductors

BLF573S HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitiv.

BLF573S Features

* Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 %

* Easy power control

* Integrated ESD protection

* Excellent ruggedness

* High efficiency

BLF573S_NXPSemiconductors.pdf