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BLF573S HF / VHF power LDMOS transistor

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Description

BLF573; BLF573S HF / VHF power LDMOS transistor Rev.3 * 8 July 2010 Product data sheet 1.Product profile 1.1 General .
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

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Datasheet Specifications

Part number
BLF573S
Manufacturer
NXP ↗ Semiconductors
File Size
137.57 KB
Datasheet
BLF573S_NXPSemiconductors.pdf
Description
HF / VHF power LDMOS transistor

Features

* Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 %
* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency

Applications

* and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be

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