BLF7G22L-200 Datasheet - Ampleon

BLF7G22L-200 Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (.

BLF7G22L-200 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent pre-distortability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regardin

BLF7G22L-200 Datasheet (409.14 KB)

BLF7G22L-200 Datasheet Preview — Preview of BLF7G22L-200 PDF

Datasheet Details

Part number:

BLF7G22L-200

Manufacturer:

Ampleon

File Size:

409.14 KB

Description:

Power ldmos transistor.

📁 Related Datasheet

BLF7G22L-250P Power LDMOS transistor (Ampleon)

BLF7G22L-250P Power LDMOS transistor (NXP)

BLF7G22LS-130 Power LDMOS transistor (NXP Semiconductors)

BLF7G22LS-200 Power LDMOS transistor (Ampleon)

BLF7G22LS-250P Power LDMOS transistor (Ampleon)

BLF7G22LS-250P Power LDMOS transistor (NXP)

BLF7G20L-160P Power LDMOS transistor (NXP)

BLF7G20L-200 Power LDMOS transistor (Ampleon)

TAGS

BLF7G22L-200 Power LDMOS transistor Ampleon

BLF7G22L-200 Distributor