BLF7G22L-200 Datasheet (Ampleon) - Power LDMOS transistor

BLF7G22L-200, Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (

BLF7G22L-200 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent pre-distortability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regardin