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BLF7G20LS-90P, BLF7G20L-90P Power LDMOS transistor

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Description

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 180.

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This datasheet PDF includes multiple part numbers: BLF7G20LS-90P, BLF7G20L-90P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF7G20LS-90P, BLF7G20L-90P
Manufacturer
Ampleon
File Size
413.76 KB
Datasheet
BLF7G20L-90P-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF7G20LS-90P, BLF7G20L-90P.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz)

Applications

* at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) G

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