Datasheet4U Logo Datasheet4U.com

BLF888DS - Power LDMOS transistor

Download the BLF888DS datasheet PDF. This datasheet also covers the BLF888D variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Excellent thermal stability.
  • Integrated ESD protection.
  • One Doherty design covers the.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF888D-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF888DS
Manufacturer Ampleon
File Size 357.79 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF888DS Datasheet

Full PDF Text Transcription

Click to expand full text
BLF888D; BLF888DS UHF power LDMOS transistor Rev. 4 — 18 February 2016 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.
Published: |