BLL6G1214L-250 LDMOS L-band radar power transistor

Ampleon

Description

BLL6G1214L-250 LDMOS L-band radar power transistor Rev.3 * 28 January 2016 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor intended for L-band radar applications in the 1.

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Datasheet Specifications

Part number: BLL6G1214L-250
Manufacturer: Ampleon
File Size: 547.92 KB
Datasheet: BLL6G1214L-250-Ampleon.pdf
Description: LDMOS L-band radar power transistor

Features

* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (1.2 GHz to 1.4 GHz)
* Internally matched for ease of use

Applications

* in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 1 ms;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 36 250 15 45 15 5 1.2 Fe

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BLL6G1214L-250 LDMOS L-band radar power transistor Ampleon

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