Datasheet Details
| Part number | BLL6H1214-500 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 227.88 KB |
| Description | LDMOS L-band radar power transistor |
| Datasheet |
 BLL6H1214-500 Datasheet
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General Description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit.
Key Features
- Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %.
- Easy power control.
- Integrated ESD protection.
- High flexibility with respect to pulse formats.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (1.2 GHz to 1.4 GHz).
