• Part: BLL6H1214L-250
  • Description: LDMOS L-band Radar Power Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 168.65 KB
Download BLL6H1214L-250 Datasheet PDF
BLL6H1214L-250 page 2
Page 2
BLL6H1214L-250 page 3
Page 3

BLL6H1214L-250 Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1.2 GHz to 1.4 GHz)
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)