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BLP7G22-10 - LDMOS driver transistor

Description

10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Table 1.

Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • High power gain.
  • Integrated.

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Datasheet Details

Part number BLP7G22-10
Manufacturer Ampleon
File Size 418.52 KB
Description LDMOS driver transistor
Datasheet download datasheet BLP7G22-10 Datasheet

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Full PDF Text Transcription

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BLP7G22-10 LDMOS driver transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) Pulsed CW 2700 110 28 2 14.5 26 - 1-carrier W-CDMA 748 110 28 0.7 27.5 13.5 43 [1] 748 110 28 2 27.5 25 40 2-carrier W-CDMA 2140 110 28 0.7 17.4 13 51 2140 110 28 2 17.4 25 40 [1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.
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