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BLP8G10S-270PW Datasheet - Ampleon

Power LDMOS transistor

BLP8G10S-270PW Features

* Excellent ruggedness

* High-efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digital pre-distortion

BLP8G10S-270PW General Description

270 W LDMOS packaged symmetric Doherty power transistor for base station applications at frequencies from 700 MHz to 900 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty application test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless oth.

BLP8G10S-270PW Datasheet (458.70 KB)

Preview of BLP8G10S-270PW PDF

Datasheet Details

Part number:

BLP8G10S-270PW

Manufacturer:

Ampleon

File Size:

458.70 KB

Description:

Power ldmos transistor.

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TAGS

BLP8G10S-270PW Power LDMOS transistor Ampleon

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