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BLP8G21S-160PV
Power LDMOS transistor
Rev. 5 — 28 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f (MHz)
IDq
VDS PL(AV) Gp
D ACPR
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1880 to 1920
600 28 20
17.5 31 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz.
1.
BLP8G21S-160PV Datasheet
