BF9100BSNL mosfet equivalent, n-channel mosfet.
z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Pa.
It is also intended for any application with low gate drive requirement.
Features
z VDS =100 V z ID =100A z Typical RD.
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applicati.
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