Datasheet4U Logo Datasheet4U.com

BF9100BSNL Datasheet - BYD

N-Channel MOSFET

BF9100BSNL Features

* z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS

BF9100BSNL General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with .

BF9100BSNL Datasheet (235.54 KB)

Preview of BF9100BSNL PDF

Datasheet Details

Part number:

BF9100BSNL

Manufacturer:

BYD

File Size:

235.54 KB

Description:

N-channel mosfet.

📁 Related Datasheet

BF910N60 N-Channel MOSFET (BYD)

BF910N60L N-Channel MOSFET (BYD)

BF912N60 N-Channel MOSFET (BYD)

BF912N60L N-Channel MOSFET (BYD)

BF91404 N-Channel MOSFET (BYD)

BF900 Sicherungshalter (Inter Control)

BF900 n-channel dual gate MOSFET (Siliconix)

BF901 Silicon n-channel dual gate MOS-FETs (NXP)

BF901R Silicon n-channel dual gate MOS-FETs (NXP)

BF9024SPD-M P-Channel MOSFET and Schottky Diode (BYD)

TAGS

BF9100BSNL N-Channel MOSFET BYD

Image Gallery

BF9100BSNL Datasheet Preview Page 2 BF9100BSNL Datasheet Preview Page 3

BF9100BSNL Distributor