Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
Features
- z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
TO-252
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
PD Power Dissipation (TC = 25°C)
TJ,Tstg
Operating junction and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Pur.
BF960NF06T-BYD.pdf
