BF96N60L Datasheet, BYD

z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Volta.

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.