Description
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
Features
- z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A)
z Low CRSS (typical 11pF) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3).
BF98N60-BYD.pdf
