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AFBR-S4N44P164M Datasheet 4 X 4 Nuv-mt Silicon Photomultiplier Array

Manufacturer: Broadcom

Overview: AFBR-S4N44P164M 4×4 NUV-MT Silicon Photomultiplier Array Data.

General Description

The Broad® AFBR-S4N44P164M is a 4×4 silicon photomultiplier (SiPM) array used for ultra-sensitive precision measurements of single photons.

This SiPM is based on NUV-MT technology, which bines improved photo-detection efficiency (PDE) with a decreased dark count rate and reduced crosstalk pared to NUV-HD technology.

The pitch of SiPMs is 4 mm in both directions.

Key Features

  • 4×4 SiPM array.
  • Array size: 16.00 mm × 16.00 mm.
  • High PDE (63% at 420 nm).
  • Excellent SPTR and CRT.
  • Excellent uniformity of breakdown voltage.
  • Excellent uniformity of gain.
  • 4-side tileable, with high fill factors.
  • Cell pitch: 40 μm.
  • Highly transparent epoxy protection layer.
  • Operating temperature range from.
  • 20°C to +50°C.
  • RoHS, CFM, and REACH compliant.

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