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MS12N65 - N-Channel MOSFET

General Description

low on-resistance and cost effectiveness.

Key Features

  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant package.

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Datasheet Details

Part number MS12N65
Manufacturer Bruckewell
File Size 346.52 KB
Description N-Channel MOSFET
Datasheet download datasheet MS12N65 Datasheet

Full PDF Text Transcription for MS12N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MS12N65. For precise diagrams, and layout, please refer to the original PDF.

MS12N65 N-Channel Enhancement Mode Power MOSFET Description The MS12N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s...

View more extracted text
ode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

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