MSF10N80 Description
The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all mercial-industrial applications.
MSF10N80 Key Features
- 100% EAS Test
- Rugged Gate Oxide Technology
- Extremely Low Intrinsic Capacitances
- Remarkable Switching Characteristics
- Unequalled Gate Charge: 10.5 nC (Typ.)
- Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
- RoHS pliant package Application
- Power Factor Correction
- LCD TV Power
- Full and Half Bridge Power Packing &