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N-Channel Trench Power MOSFET
General Description
The CSD60N53 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
● VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Power switching application ● load switching
CSD60N53
To-252 Top View
Schematic Diagram
VDS =60V ID = 88A
RDS(ON)= 5.5mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD60N53
CSD60N53
TO-252
Reel Size -
Table 1.
CSD60N53 Datasheet
