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BD139 - NPN EPITAXIAL SILICON POWER TRANSISTORS

Download the BD139 datasheet PDF (BD135 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn epitaxial silicon power transistors.

Description

Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Sto

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD135-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD139
Manufacturer CDIL
File Size 234.56 KB
Description NPN EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD139 Datasheet

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Other Datasheets by CDIL
  • BD165 - NPN PLASTIC POWER TRANSISTORS
  • BD166 - PNP PLASTIC POWER TRANSISTORS
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  • BD169 - NPN PLASTIC POWER TRANSISTORS
  • BD170 - PNP PLASTIC POWER TRANSISTORS
  • BD175 - EPITAXIAL SILICON POWER TRANSISTORS
  • BD176 - EPITAXIAL SILICON POWER TRANSISTORS

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package ECB Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD135 45 45 45 BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.
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