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NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR

Features

  • Super low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz.
  • Micro-X plastic (S02) package.

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Datasheet Details

Part number NE3512S02
Manufacturer CEL
File Size 228.56 KB
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet download datasheet NE3512S02 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-band DBS LNB • Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE3512S02-T1D Order Number NE3512S02-T1C-A NE3512S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking C Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.
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