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NE3512S02 Datasheet, CEL

NE3512S02 transistor equivalent, hetero junction field effect transistor.

NE3512S02 Avg. rating / M : 1.0 rating-12

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NE3512S02 Datasheet

Features and benefits


* Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
* Micro-X plastic (S02) package APPLICATIONS
* C to Ku-ba.

Application


* C to Ku-band DBS LNB
* Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1.

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