• Part: NE3512S02
  • Description: HETERO JUNCTION FIELD EFFECT TRANSISTOR
  • Manufacturer: CEL
  • Size: 228.56 KB
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Datasheet Summary

.. HETERO JUNCTION FIELD EFFECT TRANSISTOR C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Features - Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz - Micro-X plastic (S02) package APPLICATIONS - C to Ku-band DBS LNB - Other C to Ku-band munication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE3512S02-T1D Order Number NE3512S02-T1C-A NE3512S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking C Supplying Form - 8 mm wide embossed taping - Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part...