Part number:
NE3512S02
Manufacturer:
CEL
File Size:
228.56 KB
Description:
Hetero junction field effect transistor.
NE3512S02 Datasheet (228.56 KB)
* Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
* Micro-X plastic (S02) package APPLICATIONS
* C to Ku-band DBS LNB
* Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE3512S0
NE3512S02 Datasheet (228.56 KB)
NE3512S02
CEL
228.56 KB
Hetero junction field effect transistor.
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