NE3514S02 Key Features
- Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
- Micro-X plastic (S02) package
- Part: NE3514S02
- Manufacturer: CEL
- Size: 227.50 KB
Related CEL Datasheets
| Part Number | Description |
|---|---|
| NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3511S02 | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE350184C | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NE3514S02 Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.