NE856M02 - NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
CEL
General Description
E
B
E
0.42 ±0.06 1.5 3.0 0.45 ±0.06
0.42 ±0.06
3.95±0.26
C
2.45±0.1
0.25±0.02
PIN CONNECTIONS E: Emitter C: Collector B: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 fT CRE3 |S21E|2 NF1 NF2 PARAMETERS AND CONDITIONS
Full PDF Text Transcription for NE856M02 (Reference)
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NE856M02. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-...
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S • • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of th
NE856M02 Datasheet
