NESG2031M05 Description
NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high frequency performance for pact wireless designs. (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO...
NESG2031M05 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (