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NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR

General Description

NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

Key Features

  • HIGH.

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Datasheet Details

Part number NESG2031M05
Manufacturer CEL
File Size 183.30 KB
Description NPN SiGe HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG2031M05 Datasheet

Full PDF Text Transcription for NESG2031M05 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NESG2031M05. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGUR...

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VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance • • M05 DESCRIPTION NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.

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