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CEC3933 - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 30V, 39A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 19mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 56 78 Bottom View DFN3.
  • 3 43 21.

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Datasheet Details

Part number CEC3933
Manufacturer CET
File Size 407.81 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEC3933 Datasheet

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Full PDF Text Transcription (Reference)

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CEC3933 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 39A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 19mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 56 78 Bottom View DFN3*3 43 21 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@RθJc @RθJA Drain Current-Pulsed a@RθJc ID 39 ID 12.5 IDM 156 @RθJA IDM 50 Maximum Power Dissipation PD 2.