N-Channel Enhancement Mode Field Effect Transistor
CEC3933 Product details
Features
30V, 39A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 19mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D
G S
56 78 Bottom View
DFN3.