CEH2608
CEH2608 is Dual MOSFET manufactured by CET.
FEATURES
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; Ro HS pliant.
Surface mount Package.
4 5 6
3 2 1 TSOP-6
G1(1)
D1(6)
G2(3) S1(5)
D2(4) S2(2)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 20
VGS ±12
ID 3.8
IDM 15.2
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 110
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
Rev 1. 2012.May http://.cetsemi.
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Test...
