CS10N65ARR-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650
V
10
A
130
W
0.86
Ω
* Low ON Resistance(Rdson≤1.0Ω)
* Low Gate Charge (Typical Data:32nC)
.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS10N65 ARR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power .
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