CS1N15ASFD-G mosfet equivalent, silicon n-channel power mosfet.
l ESD improved Capability l Depletion-mode ( Normally-on) l Fast Switching
l Low On-Resistance l Improved dv/dt capability l Halogen free available
150
V
0.2
A
4
.
Power switch circuit of adaptor and charger.
Absolute（Ta= 25℃ unless otherwise specified）：
Symbol Parameter
VDSX
ID .
CS1N15ASFD-G, the silicon N-channel Depletion-Mode VDMOSFETs, is obtained by advanced planar Technology which
VDSX ID min RDS(ON)Typ
reduce the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be.
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