* Fast Switching
* Low ON Resistance(Rdson≤10Ω)
* Low Gate Charge (Typical Data: 6.2nC)
* Low Reverse transfer capacitances(Typical:2.5pF)
* 100.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS1N50 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS1N50A1

CS1N50A1R

CS1N50ATR

CS1N15ASFD-G

CS1N60

CS1N60A1H

CS1N60A23H

CS1N60A3H

CS1N60A4H

CS1N60B1R

CS1N60B3R

CS1N60C1H

CS1N60C1HD