l Fast Switching l Low ON Resistance(Rdson≤0.40Ω) l Low Gate Charge (Typical Data: 140.5nC) l Low Reverse transfer capacitances(Typical: 18.3pF) l 100% Single Pulse aval.

Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R.

VDSS 900 CS20N90 ANR, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 250 which reduce the conduction loss, improve switching RDS(ON)Typ 0.28 performance and enhance the avalan.

CS20N50A0R

CS20N50A8H

CS20N50A8R

CS20N50ANH

CS20N50ANR

CS20N50FA9R

CS20N60A8H

CS20N60A8R

CS20N60AND

CS20N60ANH

CS20N60FA9H

CS20N60FA9R

CS20N65A