* Fast Switching
* Low ON Resistance(Rdson≤0.27Ω)
* Low Gate Charge (Typical Data:64 nC)
* Low Reverse transfer capacitances(Typical: 10pF)
* 10.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS25N50F A9R the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS25N50A8R

CS25N50AKR

CS25N50AKRZ-G

CS25N50ANR

CS25N06B3

CS25N06B4

CS25N06B8

CS25N06C3

CS25N06C4

CS25N10A4

CS250

CS2500

CS2501