l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data: 8.5nC) l Low Reverse transfer capacitances(Typical: 5.4pF) l 100% Single Pulse avalanch.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS2N60 A4HY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS2N60A4H

CS2N60A4R

CS2N60A4RZ-G

CS2N60A4T

CS2N60A23H

CS2N60A3H

CS2N60A7H

CS2N60

CS2N60B23HP

CS2N60F

CS2N60FA9H

CS2N65A3

CS2N65A3HY