CS2N60A4RZ-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤4.5Ω)
* Low Gate Charge (Typical Data: 9.5nC)
* Low Reverse transfer capacitances(Typical:3pF)
* 100%.
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID I.
CS2N60 A4RZ-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various p.
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